Paper Title:
High Growth Rate Epitaxy of Thick 4H-SiC Layers
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
165-168
DOI
10.4028/www.scientific.net/MSF.338-342.165
Citation
M. Syväjärvi, R. Yakimova, H. Jacobsson, M. K. Linnarsson, A. Henry, E. Janzén, "High Growth Rate Epitaxy of Thick 4H-SiC Layers", Materials Science Forum, Vols. 338-342, pp. 165-168, 2000
Online since
May 2000
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Price
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