High Growth Rate Epitaxy of Thick 4H-SiC Layers |
| Journal |
Materials Science Forum (Volumes 338 - 342) |
| Volume |
Silicon Carbide and Related Materials - 1999 |
| Edited by |
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer |
| Pages |
165-168 |
| DOI |
10.4028/www.scientific.net/MSF.338-342.165 |
| Citation |
Mikael Syväjärvi et al., 2000, Materials Science Forum, 338-342, 165 |
| Authors |
Mikael Syväjärvi, Rositza Yakimova, Henrik Jacobsson, Margareta K. Linnarsson, Anne Henry, Erik Janzén |
| Keywords |
Doping, Epitaxy, Purity, Semi-insulating (SI) |
| Full Paper |
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