Paper Title:
A Comparative Study of n-p GaN/SiC Heterojunction and p-n 6h-SiC Homojunction Diodes
  Abstract

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Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
1651-1654
DOI
10.4028/www.scientific.net/MSF.338-342.1651
Citation
J. Vacas, H. Lahrèche, T. Monteiro, C. Gaspar, E. Pereira, C. Brylinski, M.A. di Forte-Poisson, "A Comparative Study of n-p GaN/SiC Heterojunction and p-n 6h-SiC Homojunction Diodes", Materials Science Forum, Vols. 338-342, pp. 1651-1654, 2000
Online since
May 2000
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Price
$32.00
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