Electric Characteristics of 6H-SiC/GaN Isotype n-n Heterojunctions |
| Journal |
Materials Science Forum (Volumes 338 - 342) |
| Volume |
Silicon Carbide and Related Materials - 1999 |
| Edited by |
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer |
| Pages |
1655-0 |
| DOI |
10.4028/www.scientific.net/MSF.338-342.1655 |
| Citation |
N.I. Kuznetsov et al., 2000, Materials Science Forum, 338-342, 1655 |
| Authors |
N.I. Kuznetsov, A.E. Nikolaev, Yu.V. Melnik, Irina P. Nikitina |
| Keywords |
Electrical Properties, Equilibrium Energy-Band Diagram, Hydride Vapor Phase Epitaxy, Interface States (or Traps), Isotype n-n Heterojunction |
| Full Paper |
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