Paper Title:
Competitive Growth between Deposition and Etching in 4H-SiC CVD Epitaxy Using Quasi-Hot Wall Reactor
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
169-172
DOI
10.4028/www.scientific.net/MSF.338-342.169
Citation
M. Kushibe, Y. Ishida, H. Okumura, T. Takahashi, K. Masahara, T. Ohno, T. Suzuki, T. Tanaka, S. Yoshida, K. Arai, "Competitive Growth between Deposition and Etching in 4H-SiC CVD Epitaxy Using Quasi-Hot Wall Reactor", Materials Science Forum, Vols. 338-342, pp. 169-172, 2000
Online since
May 2000
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.