Generation and Properties of Semi-Insulating SiC Substrates |
| Journal |
Materials Science Forum (Volumes 338 - 342) |
| Volume |
Silicon Carbide and Related Materials - 1999 |
| Edited by |
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer |
| Pages |
17-20 |
| DOI |
10.4028/www.scientific.net/MSF.338-342.17 |
| Citation |
Shao Ping Wang et al., 2000, Materials Science Forum, 338-342, 17 |
| Authors |
Shao Ping Wang, Adrian R. Powell, Joan M. Redwing, Eddie Piner, Adam W. Saxler |
| Keywords |
GaN Device on SI-SiC, Resistivity, Semi-insulating (SI), SiC Substrates |
| Full Paper |
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