Paper Title:
Generation and Properties of Semi-Insulating SiC Substrates
| Periodical | Materials Science Forum (Volumes 338 - 342) |
|---|---|
| Main Theme | Silicon Carbide and Related Materials - 1999 |
| Edited by | Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer |
| Pages | 17-20 |
| DOI | 10.4028/www.scientific.net/MSF.338-342.17 |
| Citation | Shao Ping Wang et al., 2000, Materials Science Forum, 338-342, 17 |
| Authors | Shao Ping Wang, Adrian R. Powell, Joan M. Redwing, Eddie Piner, Adam W. Saxler |
| Keywords | GaN Device on SI-SiC, Resistivity, Semi-insulating (SI), SiC Substrates |
| Price | US$ 28,- |
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