Paper Title:
Generation and Properties of Semi-Insulating SiC Substrates
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
17-20
DOI
10.4028/www.scientific.net/MSF.338-342.17
Citation
S. P. Wang, A. R. Powell, J. M. Redwing, E. Piner, A. W. Saxler, "Generation and Properties of Semi-Insulating SiC Substrates", Materials Science Forum, Vols. 338-342, pp. 17-20, 2000
Online since
May 2000
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.