Paper Title:
Homoepitaxy of Silicon Carbide Using the Single Precursor 1,3-Disilabutane
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
177-180
DOI
10.4028/www.scientific.net/MSF.338-342.177
Citation
S. Y. Lee, K. W. Lee, Y. Kim, "Homoepitaxy of Silicon Carbide Using the Single Precursor 1,3-Disilabutane", Materials Science Forum, Vols. 338-342, pp. 177-180, 2000
Online since
May 2000
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Price
$32.00
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