Paper Title:
4H-SiC (11-20) Epitaxial Growth
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
189-192
DOI
10.4028/www.scientific.net/MSF.338-342.189
Citation
T. Kimoto, T. Yamamoto, Z. Y. Chen, H. Yano, H. Matsunami, "4H-SiC (11-20) Epitaxial Growth", Materials Science Forum, Vols. 338-342, pp. 189-192, 2000
Online since
May 2000
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Price
$32.00
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