Paper Title:
Homoepitaxial Growth of 6H SiC on Single Crystalline Spheres
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
193-196
DOI
10.4028/www.scientific.net/MSF.338-342.193
Citation
K. Christiansen, S. Christiansen, H. P. Strunk, R. Helbig, "Homoepitaxial Growth of 6H SiC on Single Crystalline Spheres", Materials Science Forum, Vols. 338-342, pp. 193-196, 2000
Online since
May 2000
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Price
$32.00
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