Paper Title:
Morphological Stability of 6H-SiC Epitaxial Layer on Hemispherical Substrates Prepared by Chemical Vapor Deposition
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
197-200
DOI
10.4028/www.scientific.net/MSF.338-342.197
Citation
S. Nishino, Y. Nishio, Y. Masuda, Y. Chen, C. Jacob, "Morphological Stability of 6H-SiC Epitaxial Layer on Hemispherical Substrates Prepared by Chemical Vapor Deposition", Materials Science Forum, Vols. 338-342, pp. 197-200, 2000
Online since
May 2000
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.