Paper Title:
Growth of SiC on 6H-SiC {01-14} Substrates by Gas Source Molecular Beam Epitaxy
  Abstract

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Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
201-204
DOI
10.4028/www.scientific.net/MSF.338-342.201
Citation
S. Nakamura, T. Hatayama, T. Kimoto, T. Fuyuki, H. Matsunami, "Growth of SiC on 6H-SiC {01-14} Substrates by Gas Source Molecular Beam Epitaxy", Materials Science Forum, Vols. 338-342, pp. 201-204, 2000
Online since
May 2000
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