Paper Title:
Vanadium-free Semi-insulating 4H-SiC Substrates
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
21-24
DOI
10.4028/www.scientific.net/MSF.338-342.21
Citation
W.C. Mitchel, A. W. Saxler, R. Perrin, J. Goldstein, S.R. Smith, A.O. Evwaraye, J.S. Solomon, M.F. Brady, V. F. Tsvetkov, C. H. Carter Jr., "Vanadium-free Semi-insulating 4H-SiC Substrates", Materials Science Forum, Vols. 338-342, pp. 21-24, 2000
Online since
May 2000
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.