Vanadium-free Semi-insulating 4H-SiC Substrates |
| Journal |
Materials Science Forum (Volumes 338 - 342) |
| Volume |
Silicon Carbide and Related Materials - 1999 |
| Edited by |
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer |
| Pages |
21-24 |
| DOI |
10.4028/www.scientific.net/MSF.338-342.21 |
| Citation |
W.C. Mitchel et al., 2000, Materials Science Forum, 338-342, 21 |
| Authors |
W.C. Mitchel, Adam W. Saxler, Ronald Perrin, Jonathan Goldstein, S.R. Smith, A.O. Evwaraye, J.S. Solomon, M.F. Brady, Valeri F. Tsvetkov, Calvin H. Carter Jr. |
| Keywords |
4H-SiC, Admittance Spectroscopy, Hall-Effect, Physical Vapor Transport, Semi-Insulating Material |
| Full Paper |
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