Paper Title:
Growth of SiC and GaN on Porous Buffer Layers
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
225-228
DOI
10.4028/www.scientific.net/MSF.338-342.225
Citation
M. G. Mynbaeva, N.S. Savkina, A. S. Tregubova, M.P. Scheglov, A. A. Lebedev, A.S. Zubrilov, A. Titkov, A. Kryganovski, K. Mynbaev, N. V. Seredova, D. Tsvetkov, S. Stepanov, A.E. Cherenkov, I. Kotousova, V. Dmitriev, "Growth of SiC and GaN on Porous Buffer Layers", Materials Science Forum, Vols. 338-342, pp. 225-228, 2000
Online since
May 2000
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.