Paper Title:
Lateral Epitaxial Overgrowth and Pendeo Epitaxy of 3C-SiC on Si Substrates
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
245-248
DOI
10.4028/www.scientific.net/MSF.338-342.245
Citation
S. E. Saddow, G.E. Carter, B. Geil, T.S. Zheleva, G. Melnychuck, M.E. Okhuysen, M. S. Mazzola, R.D. Vispute, M. A. Derenge, M. H. Ervin, K. A. Jones, "Lateral Epitaxial Overgrowth and Pendeo Epitaxy of 3C-SiC on Si Substrates", Materials Science Forum, Vols. 338-342, pp. 245-248, 2000
Online since
May 2000
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