Paper Title:
Selective Epitaxial Growth of Silicon Carbide on Patterned Silicon Substrates Using Hexachlorodisilane and Propane
  Abstract

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Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
249-252
DOI
10.4028/www.scientific.net/MSF.338-342.249
Citation
C. Jacob, M. H. Hong, J. Chung, P. Pirouz, S. Nishino, "Selective Epitaxial Growth of Silicon Carbide on Patterned Silicon Substrates Using Hexachlorodisilane and Propane", Materials Science Forum, Vols. 338-342, pp. 249-252, 2000
Online since
May 2000
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Price
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