Paper Title:
Improvement of 3C-SiC Surface Morphology on Si(100) by Adding HCl using Atmospheric CVD
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
257-260
DOI
10.4028/www.scientific.net/MSF.338-342.257
Citation
Y. Chen, Y. Masuda, C. Jacob, T. Shirafuji, S. Nishino, "Improvement of 3C-SiC Surface Morphology on Si(100) by Adding HCl using Atmospheric CVD", Materials Science Forum, Vols. 338-342, pp. 257-260, 2000
Online since
May 2000
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Price
$32.00
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