Paper Title:
Formation of High Quality SiC on Si(100) at 900°C using Monomethylsilane Gas-Source MBE
  Abstract

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Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
269-272
DOI
10.4028/www.scientific.net/MSF.338-342.269
Citation
H. Nakazawa, M. Suemitsu, S. Asami, "Formation of High Quality SiC on Si(100) at 900°C using Monomethylsilane Gas-Source MBE", Materials Science Forum, Vols. 338-342, pp. 269-272, 2000
Online since
May 2000
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Price
$32.00
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