Paper Title:
Growth and Characterization of N-Doped SiC Films from Trimethylsilane
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
273-276
DOI
10.4028/www.scientific.net/MSF.338-342.273
Citation
J. M. Chen, A.J. Steckl, M. J. Loboda, "Growth and Characterization of N-Doped SiC Films from Trimethylsilane", Materials Science Forum, Vols. 338-342, pp. 273-276, 2000
Online since
May 2000
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Price
$32.00
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