Paper Title:
The Effect of Ge on the Structure & Morphology of SiC Films Grown on (111) Si Substrates
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
277-280
DOI
10.4028/www.scientific.net/MSF.338-342.277
Citation
W.L. Sarney, L. Salamanca-Riba, P. Zhou, C. Taylor, M. G. Spencer, R.D. Vispute, K. A. Jones, "The Effect of Ge on the Structure & Morphology of SiC Films Grown on (111) Si Substrates", Materials Science Forum, Vols. 338-342, pp. 277-280, 2000
Online since
May 2000
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Price
$35.00
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