Paper Title:
In Situ Monitoring of the Effect of Ge on the SiC Growth on (111)Si Surfaces
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
281-284
DOI
10.4028/www.scientific.net/MSF.338-342.281
Citation
T. Wöhner, T. Stauden, J.A. Schaefer, J. Pezoldt, "In Situ Monitoring of the Effect of Ge on the SiC Growth on (111)Si Surfaces", Materials Science Forum, Vols. 338-342, pp. 281-284, 2000
Online since
May 2000
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Price
$32.00
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