Paper Title:
Epitaxial Growth of β-SiC on Ion-Beam Synthesized β-SiC: Structural Characterization
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
309-312
DOI
10.4028/www.scientific.net/MSF.338-342.309
Citation
A. Romano-Rodríguez, A. Pérez-Rodríguez, C. Serre, J.R. Morante, J. Esteve, M.C. Acero, R. Kögler, W. Skorupa, M. Östling, N. Nordell, S. Karlsson, J. Van Landuyt, "Epitaxial Growth of β-SiC on Ion-Beam Synthesized β-SiC: Structural Characterization", Materials Science Forum, Vols. 338-342, pp. 309-312, 2000
Online since
May 2000
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