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Global Numerical Simulation of Heat and Mass Transfer during SiC Bulk Crystal PVT Growth

Journal Materials Science Forum (Volumes 338 - 342)
Volume Silicon Carbide and Related Materials - 1999
Edited by Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages 31-34
DOI 10.4028/www.scientific.net/MSF.338-342.31
Citation M. Selder et al., 2000, Materials Science Forum, 338-342, 31
Authors M. Selder, L. Kadinski, F. Durst, Thomas L. Straubinger, Dieter Hofmann, Peter J. Wellmann
Keywords Global Heat Transfer, Mass Transfer, Numerical Modeling, Physical Vapor Transport, SiC Bulk Growth
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