Paper Title:
Growth of Single Crystalline 3C-SiC and AIN on Si using Porous Si as a Compliant Seed Crystal
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
313-316
DOI
10.4028/www.scientific.net/MSF.338-342.313
Citation
D. Purser, M. Jenkins, D. Lieu, F. Vaccaro, A. Faik, M.A. Hasan, H.J. Leamy, C. Carlin, M. R. Sardela, Q. X. Zhao, M. Willander, M. Karlsteen, "Growth of Single Crystalline 3C-SiC and AIN on Si using Porous Si as a Compliant Seed Crystal", Materials Science Forum, Vols. 338-342, pp. 313-316, 2000
Online since
May 2000
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Price
$32.00
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