Paper Title:

The Growth and Characterization of 3C-SiC/SiNx/Si Structure

Periodical Materials Science Forum (Volumes 338 - 342)
Main Theme Silicon Carbide and Related Materials - 1999
Edited by Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages 317-320
DOI 10.4028/www.scientific.net/MSF.338-342.317
Citation Kwang Chul Kim et al., 2000, Materials Science Forum, 338-342, 317
Authors Kwang Chul Kim, Chan Il Park, Kee Suk Nahm, Eun Kyung Suh
Keywords Crystal Quality, Electrical Property, Nitridation, SiNx/Si Structure
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