Paper Title:
The Growth and Characterization of 3C-SiC/SiNx/Si Structure
| Periodical |
Materials Science Forum (Volumes 338 - 342)
|
| Main Theme |
Silicon Carbide and Related Materials - 1999
|
| Edited by |
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer |
| Pages |
317-320 |
| DOI |
10.4028/www.scientific.net/MSF.338-342.317 |
| Citation |
Kwang Chul Kim et al., 2000, Materials Science Forum, 338-342, 317 |
| Authors |
Kwang Chul Kim, Chan Il Park, Kee Suk Nahm, Eun Kyung Suh |
| Keywords |
Crystal Quality, Electrical Property, Nitridation, SiNx/Si Structure |
| Price |
US$ 28,- |