Paper Title:
In-Situ RHEED Analysis During α-SiC Homoepitaxy on (0001)Si- and (000-1)C-Faces by Gas Source Molecular Beam Epitaxy
  Abstract

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Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
361-364
DOI
10.4028/www.scientific.net/MSF.338-342.361
Citation
T. Hatayama, T. Fuyuki, S. Nakamura, K. Kurobe, T. Kimoto, H. Matsunami, "In-Situ RHEED Analysis During α-SiC Homoepitaxy on (0001)Si- and (000-1)C-Faces by Gas Source Molecular Beam Epitaxy", Materials Science Forum, Vols. 338-342, pp. 361-364, 2000
Online since
May 2000
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Price
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