Growth Rate Control in SiC-Physical Vapor Transport Method Through Heat Transfer Modeling and Non-Stationary Process Conditions |
| Journal |
Materials Science Forum (Volumes 338 - 342) |
| Volume |
Silicon Carbide and Related Materials - 1999 |
| Edited by |
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer |
| Pages |
39-42 |
| DOI |
10.4028/www.scientific.net/MSF.338-342.39 |
| Citation |
Thomas L. Straubinger et al., 2000, Materials Science Forum, 338-342, 39 |
| Authors |
Thomas L. Straubinger, Matthias Bickermann, M. Grau, Dieter Hofmann, L. Kadinski, Stephan G. Müller, M. Selder, Peter J. Wellmann, Albrecht Winnacker |
| Keywords |
Heat Transfer, Mass Transport, Non-Stationary Process |
| Full Paper |
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