Paper Title:
Growth Rate Control in SiC-Physical Vapor Transport Method Through Heat Transfer Modeling and Non-Stationary Process Conditions
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
39-42
DOI
10.4028/www.scientific.net/MSF.338-342.39
Citation
T. L. Straubinger, M. Bickermann, M. Grau, D. Hofmann, L. Kadinski, S. G. Müller, M. Selder, P. J. Wellmann, A. Winnacker, "Growth Rate Control in SiC-Physical Vapor Transport Method Through Heat Transfer Modeling and Non-Stationary Process Conditions", Materials Science Forum, Vols. 338-342, pp. 39-42, 2000
Online since
May 2000
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Price
$32.00
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