Paper Title:
XPS Analysis of SiO2/SiC Interface Annealed in Nitric Oxide Ambient
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
399-402
DOI
10.4028/www.scientific.net/MSF.338-342.399
Citation
H.-F. Li, S. Dimitrijev, D. Sweatman, H.B. Harrison, "XPS Analysis of SiO2/SiC Interface Annealed in Nitric Oxide Ambient", Materials Science Forum, Vols. 338-342, pp. 399-402, 2000
Online since
May 2000
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.