Paper Title:
Thermal Annealing Effect on TiN/Ti Layers on 4H-SiC: Metal-Semiconductor Interface Characterization
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
411-414
DOI
10.4028/www.scientific.net/MSF.338-342.411
Citation
D. Defives, O. Durand, F. Wyczisk, J. Olivier, O. Noblanc, C. Brylinski, "Thermal Annealing Effect on TiN/Ti Layers on 4H-SiC: Metal-Semiconductor Interface Characterization", Materials Science Forum, Vols. 338-342, pp. 411-414, 2000
Online since
May 2000
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Price
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