Paper Title:
Monolayer Growth Modes of Re and Nb on the Polar Faces of 4H-SiC
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
423-426
DOI
10.4028/www.scientific.net/MSF.338-342.423
Citation
K.W. Bryant, M.J. Bozack, "Monolayer Growth Modes of Re and Nb on the Polar Faces of 4H-SiC", Materials Science Forum, Vols. 338-342, pp. 423-426, 2000
Online since
May 2000
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Price
$32.00
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