Paper Title:
In-situ Observation of SiC Bulk Single Crystal Growth by X-Ray Topography
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
457-460
DOI
10.4028/www.scientific.net/MSF.338-342.457
Citation
T. Kato, N. Oyanagi, H. Yamaguchi, Y. Takano, S. I. Nishizawa, K. Arai, "In-situ Observation of SiC Bulk Single Crystal Growth by X-Ray Topography", Materials Science Forum, Vols. 338-342, pp. 457-460, 2000
Online since
May 2000
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.