X-ray Topographic Study of SiC Crystal at High Temperature |
| Journal |
Materials Science Forum (Volumes 338 - 342) |
| Volume |
Silicon Carbide and Related Materials - 1999 |
| Edited by |
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer |
| Pages |
461-464 |
| DOI |
10.4028/www.scientific.net/MSF.338-342.461 |
| Citation |
Hirotaka Yamaguchi et al., 2000, Materials Science Forum, 338-342, 461 |
| Authors |
Hirotaka Yamaguchi, Naoki Oyanagi, Tomohisa Kato, Yukio Takano, Shinichi Nishizawa, Wook Bahng, Sadafumi Yoshida, Kazuo Arai |
| Keywords |
In Situ Observation, Crystal Growth, High-Temperature Topography, X-Ray Topography |
| Full Paper |
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