Paper Title:
X-ray Topographic Study of SiC Crystal at High Temperature
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
461-464
DOI
10.4028/www.scientific.net/MSF.338-342.461
Citation
H. Yamaguchi, N. Oyanagi, T. Kato, Y. Takano, S. I. Nishizawa, W. Bahng, S. Yoshida, K. Arai, "X-ray Topographic Study of SiC Crystal at High Temperature", Materials Science Forum, Vols. 338-342, pp. 461-464, 2000
Online since
May 2000
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Price
$32.00
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