Paper Title:
Correlation of EBIC and SWBXT Imaged Defects and Epilayer Growth Pits in 6H-SiC Schottky Diodes
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
489-492
DOI
10.4028/www.scientific.net/MSF.338-342.489
Citation
C.M. Schnabel, M. Tabib-Azar, P. G. Neudeck, S.G. Bailey, H.B. Su, M. Dudley, R.P. Raffaelle, "Correlation of EBIC and SWBXT Imaged Defects and Epilayer Growth Pits in 6H-SiC Schottky Diodes", Materials Science Forum, Vols. 338-342, pp. 489-492, 2000
Online since
May 2000
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.