Paper Title:
High Order X-ray Diffraction and Internal Atomic Layer Roughness of Epitaxial and Bulk SiC Materials
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
501-504
DOI
10.4028/www.scientific.net/MSF.338-342.501
Citation
G. Xu, Z. C. Feng, "High Order X-ray Diffraction and Internal Atomic Layer Roughness of Epitaxial and Bulk SiC Materials", Materials Science Forum, Vols. 338-342, pp. 501-504, 2000
Online since
May 2000
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