Paper Title:
4H-SiC CVD Epitaxial Layers with Improved Structural Quality Grown on SiC Wafers with Reduced Micropipe Density
  Abstract

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Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
505-508
DOI
10.4028/www.scientific.net/MSF.338-342.505
Citation
E. V. Kalinina, A.S. Zubrilov, V. Solov'ev, N.I. Kuznetsov, A. Hallén, A. O. Konstantinov, S. Karlsson, S.V. Rendakova, V. Dmitriev, "4H-SiC CVD Epitaxial Layers with Improved Structural Quality Grown on SiC Wafers with Reduced Micropipe Density", Materials Science Forum, Vols. 338-342, pp. 505-508, 2000
Online since
May 2000
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