Paper Title:
Single Crystal Growth of 6H-SiC on Saw-Damaged Substrate by Sublimation Method
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
51-54
DOI
10.4028/www.scientific.net/MSF.338-342.51
Citation
S. Okada, T. Nishiguchi, T. Shimizu, M. Sasaki, S. Oshima, S. Nishino, "Single Crystal Growth of 6H-SiC on Saw-Damaged Substrate by Sublimation Method", Materials Science Forum, Vols. 338-342, pp. 51-54, 2000
Online since
May 2000
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Price
$32.00
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