Paper Title:
Stacking Fault Energy of 6H-SiC and 4H-SiC Single Crystals
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
513-516
DOI
10.4028/www.scientific.net/MSF.338-342.513
Citation
M. H. Hong, A.V. Samant, P. Pirouz, "Stacking Fault Energy of 6H-SiC and 4H-SiC Single Crystals", Materials Science Forum, Vols. 338-342, pp. 513-516, 2000
Online since
May 2000
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Price
$32.00
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