Paper Title:
Deformation Tests on 4H-SiC Single Crystals between 900°C and 1360°C and the Microstructure of the Deformed Samples
  Abstract

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Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
517-520
DOI
10.4028/www.scientific.net/MSF.338-342.517
Citation
J. L. Demenet, M. H. Hong, P. Pirouz, "Deformation Tests on 4H-SiC Single Crystals between 900°C and 1360°C and the Microstructure of the Deformed Samples", Materials Science Forum, Vols. 338-342, pp. 517-520, 2000
Online since
May 2000
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