Paper Title:
Characterization of Polycrystalline SiC Grown on SiO2 and Si3N4 by APCVD for MEMS Applications
  Abstract

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Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
541-544
DOI
10.4028/www.scientific.net/MSF.338-342.541
Citation
C.-H. Wu, C. A. Zorman, M. Mehregany, "Characterization of Polycrystalline SiC Grown on SiO2 and Si3N4 by APCVD for MEMS Applications", Materials Science Forum, Vols. 338-342, pp. 541-544, 2000
Online since
May 2000
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