Paper Title:
Characterization of Silicon Carbide using Raman Spectroscopy
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
615-618
DOI
10.4028/www.scientific.net/MSF.338-342.615
Citation
J.C. Burton, F.H. Long, Y. I. Khlebnikov, I.I. Khlebnikov, M. Parker , T. S. Sudarshan, "Characterization of Silicon Carbide using Raman Spectroscopy", Materials Science Forum, Vols. 338-342, pp. 615-618, 2000
Online since
May 2000
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Price
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