Paper Title:
Nucleation of Dislocations during Physical Vapor Transport Growth of Silicon Carbide
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
63-66
DOI
10.4028/www.scientific.net/MSF.338-342.63
Citation
E. M. Sanchez, V.D. Heydemann, D. Snyder, G. S. Rohrer, M. Skowronski, "Nucleation of Dislocations during Physical Vapor Transport Growth of Silicon Carbide", Materials Science Forum, Vols. 338-342, pp. 63-66, 2000
Online since
May 2000
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Price
$32.00
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