Paper Title:
Vanadium-related Center in 4H Silicon Carbide
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
631-634
DOI
10.4028/www.scientific.net/MSF.338-342.631
Citation
B. Magnusson, M. Wagner, N. T. Son, E. Janzén, "Vanadium-related Center in 4H Silicon Carbide", Materials Science Forum, Vols. 338-342, pp. 631-634, 2000
Online since
May 2000
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Price
$32.00
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