Paper Title:
Electronic States of Vacancies in 3C- and 4H-SiC
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
643-646
DOI
10.4028/www.scientific.net/MSF.338-342.643
Citation
A. Zywietz, J. Furthmüller, F. Bechstedt, "Electronic States of Vacancies in 3C- and 4H-SiC", Materials Science Forum, Vols. 338-342, pp. 643-646, 2000
Online since
May 2000
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Price
$32.00
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