Paper Title:
Free Carrier Diffusion Measurements in Epitaxial 4H-SiC with a Fourier Transient Grating Technique: Injection Dependence
  Abstract

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Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
671-674
DOI
10.4028/www.scientific.net/MSF.338-342.671
Citation
P. Grivickas, J. Linnros, V. Grivickas, "Free Carrier Diffusion Measurements in Epitaxial 4H-SiC with a Fourier Transient Grating Technique: Injection Dependence", Materials Science Forum, Vols. 338-342, pp. 671-674, 2000
Online since
May 2000
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