Paper Title:
Photon Emission Mechanisms in 6H and 4H-SiC MOSFETs
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
695-698
DOI
10.4028/www.scientific.net/MSF.338-342.695
Citation
C. Banc, E. Bano, T. Ouisse, S. Scharnholz, U. Schmid, W. Wondrak, E. Niemann, "Photon Emission Mechanisms in 6H and 4H-SiC MOSFETs", Materials Science Forum, Vols. 338-342, pp. 695-698, 2000
Online since
May 2000
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Price
$32.00
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