Paper Title:
Ionization Energies and Electron Mobilities in Phosphorus- and Nitrogen-Implanted 4H-Silicon Carbide
  Abstract

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Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
703-706
DOI
10.4028/www.scientific.net/MSF.338-342.703
Citation
M. A. Capano, J. A. Cooper, M.R. Melloch, A. W. Saxler, W.C. Mitchel, "Ionization Energies and Electron Mobilities in Phosphorus- and Nitrogen-Implanted 4H-Silicon Carbide", Materials Science Forum, Vols. 338-342, pp. 703-706, 2000
Online since
May 2000
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