Paper Title:
Electrical Properties of 3C-SiC Grown on Si by CVD Method using Si2(CH3)6
  Abstract

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Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
711-714
DOI
10.4028/www.scientific.net/MSF.338-342.711
Citation
Y. Masuda, Y. Chen, H. Matsuura, H. Harima, S. Nishino, "Electrical Properties of 3C-SiC Grown on Si by CVD Method using Si2(CH3)6", Materials Science Forum, Vols. 338-342, pp. 711-714, 2000
Online since
May 2000
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