Paper Title:
Theoretical Calculation of the Electron Hall Mobility in n-Type 4H– and 6H-SiC
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
729-732
DOI
10.4028/www.scientific.net/MSF.338-342.729
Citation
H. Iwata, K. M. Itoh, "Theoretical Calculation of the Electron Hall Mobility in n-Type 4H– and 6H-SiC", Materials Science Forum, Vols. 338-342, pp. 729-732, 2000
Online since
May 2000
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.