Paper Title:
Hall Scattering Factor and Electron Mobility of 4H SiC: Measurements and Numerical Simulation
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
733-736
DOI
10.4028/www.scientific.net/MSF.338-342.733
Citation
G. Rutsch, R. P. Devaty, W. J. Choyke, D.W. Langer, L.B. Rowland, E. Niemann, F. Wischmeyer, "Hall Scattering Factor and Electron Mobility of 4H SiC: Measurements and Numerical Simulation", Materials Science Forum, Vols. 338-342, pp. 733-736, 2000
Online since
May 2000
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.