Paper Title:
Hall Mobility of the Electron Inversion Layer in 6H-SiC MOSFETs
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
737-740
DOI
10.4028/www.scientific.net/MSF.338-342.737
Citation
N.S. Saks, S.S. Mani, A. K. Agarwal, V.S. Hegde, "Hall Mobility of the Electron Inversion Layer in 6H-SiC MOSFETs", Materials Science Forum, Vols. 338-342, pp. 737-740, 2000
Online since
May 2000
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Price
$32.00
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