SiC Single Crystal Growth Rate Measurement by In-Situ Observation using the Transmission X-Ray Technique |
| Journal |
Materials Science Forum (Volumes 338 - 342) |
| Volume |
Silicon Carbide and Related Materials - 1999 |
| Edited by |
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer |
| Pages |
75-78 |
| DOI |
10.4028/www.scientific.net/MSF.338-342.75 |
| Citation |
Naoki Oyanagi et al., 2000, Materials Science Forum, 338-342, 75 |
| Authors |
Naoki Oyanagi, Shinichi Nishizawa, Tomohisa Kato, Hirotaka Yamaguchi, Kazuo Arai |
| Keywords |
In Situ Observation, Growth Rate, Sublimation Growth, Transmission X-Ray Technique |
| Full Paper |
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