Paper Title:
SiC Single Crystal Growth Rate Measurement by In-Situ Observation using the Transmission X-Ray Technique
  Abstract

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Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
75-78
DOI
10.4028/www.scientific.net/MSF.338-342.75
Citation
N. Oyanagi, S. I. Nishizawa, T. Kato, H. Yamaguchi, K. Arai, "SiC Single Crystal Growth Rate Measurement by In-Situ Observation using the Transmission X-Ray Technique", Materials Science Forum, Vols. 338-342, pp. 75-78, 2000
Online since
May 2000
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Price
$32.00
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