Paper Title:
Observation of Deep Levels in SiC by Optical-Isothermal Capacitance Transient Spectroscopy
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
757-760
DOI
10.4028/www.scientific.net/MSF.338-342.757
Citation
S. Kobayashi, S. Imai, Y. Hayami, M. Kushibe, T. Shinohe, H. Okushi, "Observation of Deep Levels in SiC by Optical-Isothermal Capacitance Transient Spectroscopy", Materials Science Forum, Vols. 338-342, pp. 757-760, 2000
Online since
May 2000
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Price
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